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dc.contributor.authorChen, MJen_US
dc.contributor.authorHou, CSen_US
dc.date.accessioned2014-12-08T15:46:27Z-
dc.date.available2014-12-08T15:46:27Z-
dc.date.issued1999-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.772376en_US
dc.identifier.urihttp://hdl.handle.net/11536/31267-
dc.description.abstractThe inter-poly-oxide (IPO) capacitor is one of the main elements in present mixed-mode CMOS process technologies, However, the phenomenon of poly depletion causes a significant change in the measured capacitance with applied voltage, This effect, expressed in terms of the voltage coefficient of capacitance (VCC), can seriously deteriorate analog precision. In this letter, a novel cross-coupled scheme is proposed for the IPO capacitors. The resulting VCC has a very low measured value of 2 ppm/V in a 0.35-mu m standard mixed-mode CMOS process, achieved without any unconventional approaches.en_US
dc.language.isoen_USen_US
dc.subjectanalog circuitsen_US
dc.subjectcapacitoren_US
dc.subjectCMOSen_US
dc.subjectmixed-modeen_US
dc.subjectpoly depletionen_US
dc.subjectvoltage coefficient of capacitanceen_US
dc.titleA novel cross-coupled inter-poly-oxide capacitor for mixed-mode CMOS processesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.772376en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume20en_US
dc.citation.issue7en_US
dc.citation.spage360en_US
dc.citation.epage362en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000081151400016-
dc.citation.woscount2-
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