標題: | A new I-V model considering the impact-ionization effect initiated by the DIGBL current for the intrinsic n-channel poly-Si TFT's |
作者: | Chen, HL Wu, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | DIGBL;impact-ionization;I-V model;poly-Si TFT |
公開日期: | 1-Apr-1999 |
摘要: | Considering the impact-ionization mechanism occurring in the high drain-bias (V-DS) regime, a new I-V model considering the impact-ionization effect initiated by the drain-induced-grain-barrier-lowering (DIGBL) current has been established for the intrinsic n-channel poly-Si TFT, The simulation results with considering the developed impact-ionization current model are in excellent agreement with the experimental output characteristics of the intrinsic n-channel poly-Si TFT with the mask-gate length ranging from 5 mu m to 40 mu m. In resolving the physical parameters and their underlying operation mechanisms including the grain-barrier height, DIGBL current, and impact-ionization current, the developed I-V model will be beneficial to further understand the underlying physics of the intrinsic poky-Si TFT. |
URI: | http://dx.doi.org/10.1109/16.753706 http://hdl.handle.net/11536/31412 |
ISSN: | 0018-9383 |
DOI: | 10.1109/16.753706 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 46 |
Issue: | 4 |
起始頁: | 722 |
結束頁: | 728 |
Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.