標題: A 2-D velocity- and direction-selective sensor with BJT-based silicon retina and temporal zero-crossing detector
作者: Jiang, HC
Wu, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: bipolar junction transistor (BJT)-based silicon;retina;CMOS motion-selective sensor;current-input edge extractor;direction-selective sensing;temporal zero-crossings;velocity-selective sensing
公開日期: 1-Feb-1999
摘要: In this paper, a 2-D velocity- and direction-selective visual motion sensor with a bipolar junction transistor (BJT)-based silicon retina and temporal zero-crossing detector is proposed and implemented. In the proposed sensor, a token-based delay-and-correlate computational algorithm is adopted to detect the selected speed and direction of moving object images. Moreover, binary pulsed signals are used as correlative signals to increase the velocity and direction selectivities, Each basic detection cell in the sensor has a compact architecture, which consists of one BJT-based silicon retina cell, one current-input edge extractor, two delay paths, and four correlators, Using the proposed architecture, an experimental 32 x 32 visual motion sensor chip with a cell size of 100 x 100 mu m(2) has been designed and fabricated by using 0.6-mu m CMOS technology. The correct operations of the fabricated sensor chip have been verified through measurements. The measured ranges of selectively detected velocity and direction in the fabricated sensor chip are 56 mm/s-5 m/s and 0-360 degrees, respectively. The complete sensor system consumes 20 mW at 5 V.
URI: http://dx.doi.org/10.1109/4.743787
http://hdl.handle.net/11536/31538
ISSN: 0018-9200
DOI: 10.1109/4.743787
期刊: IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume: 34
Issue: 2
起始頁: 241
結束頁: 247
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