標題: (Ba,Sr)TiO3 thin films: Preparation, properties and reliability
作者: Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: BST;thin films;properties;reliability
公開日期: 1999
摘要: (Ba,Sr)TiO3 thin films are important capacitor materials for future gigabit era dynamic random access memory (DRAM) applications. This article reviews the technological aspects of BST films, including thin films deposition techniques, post annealing, physical, electrical and dielectric characteristics of the films, effects of bottom electrode materials, complex plane analysis of AC electrical, dielectric relaxation, and defect and reliability phenomena associated with the films. In addition, possible future developments are briefly summarized.
URI: http://hdl.handle.net/11536/31658
ISSN: 0015-0193
期刊: FERROELECTRICS
Volume: 232
Issue: 1-4
起始頁: 881
結束頁: 893
Appears in Collections:Conferences Paper