標題: | Novel contact hole fabrication using selective liquid-phase deposition instead of reactive ion etching |
作者: | Yeh, CF Liu, CH Su, JL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | liquid-phase deposition |
公開日期: | 1-一月-1999 |
摘要: | This work forms a contact hole utilizing the selectively liquid-phase deposited (S-LPD) silicon-oxide technique instead of the conventional reactive ion etching (RIE), The n(+)/p junction diode with contact hole formed by S-LPD exhibits one order less reverse current, larger forward current, smaller ideality factor, and better thermal stability than that formed by RIE. The Schottky junction with S-LPD contact hole also possesses several excellent characteristics, including ideality factor, reverse current and barrier height, even without sintering treatment. These characteristics confirm the effectiveness of S-LPD technique in replacing conventional RIE to form contact holes, particularly for the ultra-shallow junction in future. |
URI: | http://dx.doi.org/10.1109/55.737567 http://hdl.handle.net/11536/31661 |
ISSN: | 0741-3106 |
DOI: | 10.1109/55.737567 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 20 |
Issue: | 1 |
起始頁: | 39 |
結束頁: | 41 |
顯示於類別: | 期刊論文 |