標題: Novel contact hole fabrication using selective liquid-phase deposition instead of reactive ion etching
作者: Yeh, CF
Liu, CH
Su, JL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: liquid-phase deposition
公開日期: 1-Jan-1999
摘要: This work forms a contact hole utilizing the selectively liquid-phase deposited (S-LPD) silicon-oxide technique instead of the conventional reactive ion etching (RIE), The n(+)/p junction diode with contact hole formed by S-LPD exhibits one order less reverse current, larger forward current, smaller ideality factor, and better thermal stability than that formed by RIE. The Schottky junction with S-LPD contact hole also possesses several excellent characteristics, including ideality factor, reverse current and barrier height, even without sintering treatment. These characteristics confirm the effectiveness of S-LPD technique in replacing conventional RIE to form contact holes, particularly for the ultra-shallow junction in future.
URI: http://dx.doi.org/10.1109/55.737567
http://hdl.handle.net/11536/31661
ISSN: 0741-3106
DOI: 10.1109/55.737567
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 20
Issue: 1
起始頁: 39
結束頁: 41
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