Title: Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation
Authors: Lai, CS
Chao, TS
Lei, TF
Lee, CL
Huang, TY
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: N2O;polysilicon gate reoxidation;reverse short channel effect;antenna effect
Issue Date: 1-Oct-1998
Abstract: A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850 degrees C), making this N2O-related technology extremely attractive and promising for future scaled devices.
URI: http://hdl.handle.net/11536/31859
ISSN: 0021-4922
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 37
Issue: 10
Begin Page: 5507
End Page: 5509
Appears in Collections:Articles


Files in This Item:

  1. 000076630000016.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.