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dc.contributor.authorChen, Te-Chihen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChen, Shih-Chingen_US
dc.contributor.authorHsieh, Tien-Yuen_US
dc.contributor.authorJian, Fu-Yenen_US
dc.contributor.authorLin, Chia-Shengen_US
dc.contributor.authorLi, Hung-Weien_US
dc.contributor.authorLee, Ming-Hsienen_US
dc.contributor.authorChen, Jim-Shoneen_US
dc.contributor.authorShih, Ching-Chiehen_US
dc.date.accessioned2014-12-08T15:47:37Z-
dc.date.available2014-12-08T15:47:37Z-
dc.date.issued2010-12-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2010.2079912en_US
dc.identifier.urihttp://hdl.handle.net/11536/31879-
dc.description.abstractThis letter investigates the degradation mechanism of polycrystalline silicon thin-film transistors with a silicon-oxide-nitride-oxide-silicon structure under OFF-state stress. During the electrical stress, the hot hole generated from band-to-band tunneling process will inject into gate dielectric, and the significant ON-state degradation (more than 1 order) indicates that the interface states are accompanied with hot-hole injection. In addition, the asymmetric I-V characteristics indicate that the interface states are located near the drain side. Moreover, the ISE-TCAD simulation tool was utilized to model the degradation mechanism and analyze trap states distribution. Although both the vertical and lateral electrical fields are factors for degradation and hot-hole injection, the degradation is mainly affected by the lateral electrical field over a critical point.en_US
dc.language.isoen_USen_US
dc.subjectHot carriersen_US
dc.subjectnonvolatile memoryen_US
dc.subjectthin-film transistors (TFTs)en_US
dc.titleAnalysis of Degradation Mechanism in SONOS-TFT Under Hot-Carrier Operationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2010.2079912en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume31en_US
dc.citation.issue12en_US
dc.citation.spage1413en_US
dc.citation.epage1415en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000284541400019-
dc.citation.woscount8-
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