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dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorKuo, Chien-Ien_US
dc.contributor.authorChang, Edward Y.en_US
dc.contributor.authorKuo, Fang-Yaoen_US
dc.date.accessioned2014-12-08T15:47:54Z-
dc.date.available2014-12-08T15:47:54Z-
dc.date.issued2010-11-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mee.2010.02.012en_US
dc.identifier.urihttp://hdl.handle.net/11536/31983-
dc.description.abstractImprovement on the RF and noise performance for 80 nm InAs/In(0.7)Ga(0.3)As high-electron mobility transistor (HEMT) through gate sinking technology is presented. After gate sinking at 250 degrees C for 3 min, the device exhibited a high transconductance of 1900 mS/mm at a drain bias of 0.5 V with 1066 mA/mm drain-source saturation current. A current-gain cutoff frequency (f(T)) of 113 GHz and a maximum oscillation frequency (f(max)) of 110 GHz were achieved at extremely low drain bias of 0.1 V. The 0.08 x 40 mu m(2) device with gate sinking demonstrated 0.82 dB minimum noise figure and 14 dB associated gain at 17 GHz with only 1.14 mW DC power consumption. Significant improvement in RF and noise performance was mainly attributed to the reduction of gate-to-channel distance together with the parasitic source resistance through gate sinking technology. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectBuried gateen_US
dc.subjectHigh-electron mobility transistor (HEMT)en_US
dc.subjectInAsen_US
dc.subjectInGaAsen_US
dc.titleImprovement on the noise performance of InAs-based HEMTs with gate sinking technologyen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mee.2010.02.012en_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume87en_US
dc.citation.issue11en_US
dc.citation.spage2253en_US
dc.citation.epage2257en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000281420900041-
dc.citation.woscount2-
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