標題: | The Impact of Layout-Dependent STI Stress and Effective Width on Low-Frequency Noise and High-Frequency Performance in Nanoscale nMOSFETs |
作者: | Yeh, Kuo-Liang Guo, Jyh-Chyurn 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Effective mobility;effective width;low-frequency noise (LFN);shallow trench isolation (STI) stress |
公開日期: | 1-Nov-2010 |
摘要: | The impact of channel width scaling on low-frequency noise (LFN) and high-frequency performance in multifinger MOSFETs is reported in this paper. The compressive stress from shallow trench isolation (STI) cannot explain the lower LFN in extremely narrow devices. STI top corner rounding (TCR)-induced Delta W is identified as an important factor that is responsible for the increase in transconductance G(m) and the reduction in LFN with width scaling to nanoscale regime. A semi-empirical model was derived to simulate the effective mobility (mu(eff)) degradation from STI stress and the increase in effective width (W(eff)) from Delta W due to STI TCR. The proposed model can accurately predict width scaling effect on G(m) based on a tradeoff between mu(eff) and W(eff). The enhanced STI stress may lead to an increase in interface traps density (N(it)), but the influence is relatively minor and can be compensated by the W(eff) effect. Unfortunately, the extremely narrow devices suffer f(T) degradation due to an increase in C(gg). The investigation of impact from width scaling on mu(eff), G(m), and LFN, as well as the tradeoff between LFN and high-frequency performance, provides an important layout guideline for analog and RF circuit design. |
URI: | http://dx.doi.org/10.1109/TED.2010.2072959 http://hdl.handle.net/11536/31993 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2010.2072959 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 57 |
Issue: | 11 |
起始頁: | 3092 |
結束頁: | 3100 |
Appears in Collections: | Articles |
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