| Title: | A Comprehensive Study of Single-Electron Effects in Multiple-Gate MOSFETs |
| Authors: | Lee, Wei Su, Pin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 2008 |
| URI: | http://hdl.handle.net/11536/32187 |
| ISBN: | 978-1-4244-2071-1 |
| Journal: | 2008 IEEE SILICON NANOELECTRONICS WORKSHOP |
| Begin Page: | 25 |
| End Page: | 26 |
| Appears in Collections: | Conferences Paper |
- An assessment of single-electron effects in multiple-gate SOI MOSFETs with 1.6-nm gate oxide near room temperature / Lee, W;Su, P;Chen, HY;Chang, CY;Su, KW
- Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors / Lee, W.;Su, P.
- A comprehensive study on the FIBL of nanoscale MOSFETs / Tsui, BY;Chin, LF
- Enhancement of Stress-Memorization Technique on nMOSFETs by Multiple Strain-Gate Engineering / Lu, Tsung Yi;Wang, Chin Meng;Chao, Tien-Sheng
- A novel multiple-gate polycrystalline silicon nanowire transistor featuring an inverse-T gate / Lin, Horng-Chih;Hsu, Hsing-Hui;Su, Chun-Jung;Huang, Tiao-Yuan
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