标题: SIZE EFFECT ON THE ELECTRICAL-CONDUCTION AND NOISE OF RUO2-BASED THICK-FILM RESISTORS
作者: CHIOU, BS
SHEU, JY
WU, WF
电控工程研究所
Institute of Electrical and Control Engineering
关键字: THICK FILM;RESISTOR;NOISE
公开日期: 1-十二月-1992
摘要: Temperature dependence of sheet resistance for a generic RuO2-based resistor with a composition of 20 wt.% RuO2-80 wt.% glass (63 wt.% PbO-25 wt.% B2O3-12 wt.% SiO2) is evaluated. A combined tunnel/parallel conduction model is employed to describe the resistance behavior with respect to the temperature variation. The geometry of the resistive film, such as the aspect ratio and thickness, cast a significant effect on the electrical characteristic of the thick film assembly. It is observed that shorter resistive films exhibit smaller resistivity as compared to that of the longer film. Thinner resistive films have smaller resistivity as compared to the thicker ones. In addition, 1/f noise is the dominating contribution in the thick film resistor. The presence of 1/f noise can be qualitatively explained with the aid of the tunneling mechanism.
URI: http://dx.doi.org/10.1007/BF02667601
http://hdl.handle.net/11536/3223
ISSN: 0361-5235
DOI: 10.1007/BF02667601
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 21
Issue: 12
起始页: 1105
结束页: 1110
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