标题: | SIZE EFFECT ON THE ELECTRICAL-CONDUCTION AND NOISE OF RUO2-BASED THICK-FILM RESISTORS |
作者: | CHIOU, BS SHEU, JY WU, WF 电控工程研究所 Institute of Electrical and Control Engineering |
关键字: | THICK FILM;RESISTOR;NOISE |
公开日期: | 1-十二月-1992 |
摘要: | Temperature dependence of sheet resistance for a generic RuO2-based resistor with a composition of 20 wt.% RuO2-80 wt.% glass (63 wt.% PbO-25 wt.% B2O3-12 wt.% SiO2) is evaluated. A combined tunnel/parallel conduction model is employed to describe the resistance behavior with respect to the temperature variation. The geometry of the resistive film, such as the aspect ratio and thickness, cast a significant effect on the electrical characteristic of the thick film assembly. It is observed that shorter resistive films exhibit smaller resistivity as compared to that of the longer film. Thinner resistive films have smaller resistivity as compared to the thicker ones. In addition, 1/f noise is the dominating contribution in the thick film resistor. The presence of 1/f noise can be qualitatively explained with the aid of the tunneling mechanism. |
URI: | http://dx.doi.org/10.1007/BF02667601 http://hdl.handle.net/11536/3223 |
ISSN: | 0361-5235 |
DOI: | 10.1007/BF02667601 |
期刊: | JOURNAL OF ELECTRONIC MATERIALS |
Volume: | 21 |
Issue: | 12 |
起始页: | 1105 |
结束页: | 1110 |
显示于类别: | Articles |