Low V-t gate-first Al/TaN/[Ir3Si-HfSi2-x]/HfLaON CMOS using simple laser annealing/reflection

doi:10.1109/VLSIT.2008.4588614

標題:	Low V-t gate-first Al/TaN/[Ir3Si-HfSi2-x]/HfLaON CMOS using simple laser annealing/reflection
作者:	Liao, C. C. Chin, Albert Su, N. C. Li, M. -F. Wang, S. J. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-Jan-2008
摘要:	We report low V-t Al/TaN/[Ir3Si-HfSi2-x]/HfLaON CMOS using simple laser annealing/reflection with self-aligned and gate-first process compatible with current VLSI. At 1.05 nm EOT, good phi(m-eff) of 5.04 and 4.24 eV, low V-t of -0.16 and 0.13 V, high mobility of 85 and 209 cm(2)/Vs, and small 85 degrees C BTI <= 40 mV (10 MV/cm, 1 hr) are measured for p- and n-MOS.
URI:	http://dx.doi.org/10.1109/VLSIT.2008.4588614 http://hdl.handle.net/11536/32298
ISBN:	978-1-4244-1802-2
ISSN:
DOI:	10.1109/VLSIT.2008.4588614
期刊:	2008 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS
Volume:
Issue:
起始頁:	190
結束頁:	191
Appears in Collections:	Conferences Paper