標題: Transient Device Simulation of Floating Gate Nonvolatile Memory Cell With a Local Trap
作者: Watanabe, Hiroshi
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Coulomb oscillation;device modeling;device simulation;floating gate (FG);local trap;memory;modeling;single-electron sensitivity;TCAD;trap-assisted tunneling
公開日期: 1-Aug-2010
摘要: The single-electron general-purpose device simulator is improved to carry out a wide-range transient analysis from 1 ps to 10 years. We apply this simulator to a floating gate (FG) nonvolatile memory cell in order to simulate a degradation mode of data retention owing to the direct tunneling enhanced by the fixed charge stored by a local trap in an interpoly dielectric. The scaling impact of ideal high-K interpoly dielectric FG nonvolatile memory cell is also investigated.
URI: http://dx.doi.org/10.1109/TED.2010.2051248
http://hdl.handle.net/11536/32336
ISSN: 0018-9383
DOI: 10.1109/TED.2010.2051248
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 57
Issue: 8
起始頁: 1873
結束頁: 1882
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