Full metadata record
DC FieldValueLanguage
dc.contributor.authorKang, Tsung-Kueien_US
dc.contributor.authorLiao, Ta-Chuanen_US
dc.contributor.authorLin, Cheng-Lien_US
dc.contributor.authorWu, Wen-Faen_US
dc.date.accessioned2014-12-08T15:48:37Z-
dc.date.available2014-12-08T15:48:37Z-
dc.date.issued2010-08-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.49.086202en_US
dc.identifier.urihttp://hdl.handle.net/11536/32348-
dc.description.abstractPd nanocrystals (NCs) are successfully embedded in a TaN/SiO(2)/HfAlO/Si structure The initial memory window increases at a higher rate with increasing fabrication temperature of Pd NCs compared with the linear variation of Pd NC density, which is related to the thermally induced neutral traps in the HfAlO film around Pd NCs After manufacturing a TaN/SiO(2)/Pd NCs/HfAlO/Si/Al structure, the subsequent N(2) plasma treatment is conducted at 300 degrees C for 3 min The number of leakage current paths in the SiO(2) blocking layer adjacent to TaN is clearly reduced, but that of leakage current paths in SiO(2)/HfAlO around Pd NCs is slightly increased owing to the thermal stress The thermally induced neutral traps in the HfAlO film around the Pd NCs can be passivated by nitrogen atoms, which leads to the improvement of the final memory window for the Pd NC samples fabricated at 600-700 degrees C However, the intrinsic traps in the HfAlO film play an important role in memory characteristic and the final memory window is reduced by thermal densification for the Pd NC samples fabricated at 500 degrees C (C) 2010 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleEffect of Nitrogen Plasma Treatment on Electrical Characteristics for Pd Nanocrystals in Nonvolatile Memoryen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.49.086202en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume49en_US
dc.citation.issue8en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000281513400070-
dc.citation.woscount4-
Appears in Collections:Articles


Files in This Item:

  1. 000281513400070.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.