標題: Persistent photoconductivity in SiGe/Si quantum wells
作者: Tsai, LC
Huang, CF
Fan, JC
Chang, YH
Chen, YF
Tsai, WC
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-七月-1998
摘要: Persistent photoconductivity (PPC) has been observed in boron-doped Si1-xGex/Si quantum wells. The decay kinetics of the PPC effect can be well described by a stretched-exponential function, I-ppc(t) = I-ppc(0)exp[-(t/tau)(beta)](0 < beta < 1), which is usually observed in many disorder materials. Through the studies of the PPC effect under various conditions, such as different temperature, different photon energy of photoexcitation, and different Ge content, we identify that the alloy potential fluctuations induced by compositional disorder are the origin of the PPC effect in Si1-xGex/Si quantum wells. (C) 1998 American Institute of Physics. [S0021-8979(98)00914-1].
URI: http://hdl.handle.net/11536/32504
ISSN: 0021-8979
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 84
Issue: 2
起始頁: 877
結束頁: 880
顯示於類別:期刊論文