标题: | Improving radiation hardness of EEPROM/flash cell by N2O annealing |
作者: | Huang, TY Jong, FC Chao, TS Lin, HC Leu, LY Young, K Lin, CH Chiu, KY 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 1-七月-1998 |
摘要: | The effects of an N2O anneal on the radiation effects of a split-gate electrical erasable programmable read only memory (EEPROM)/flash cell with a recently-proposed horn-shaped floating gate were studied. We have found that although the cells appear to survive 1 Mrad(Si) Co-60 irradiation without data retention failure, the write/erase cycling endurance was severely impeded after irradiation. Specifically, the write/erase cycling endurance was degraded to 20 K from the pre-irradiation value of 50 K, However, by adding an N2O annealing step after the interpoly oxidation, the after-irradiation write/erase cycling endurance of the resultant cell can be significantly improved to over 45 K, N2O annealing also improves the after-irradiation program and erase efficiencies. The N2O annealing step therefore presents a potential method for enhancing the robustness of the horn-shaped floating-gate EEPROM/flash cells for radiation-hard applications. |
URI: | http://dx.doi.org/10.1109/55.701435 http://hdl.handle.net/11536/32550 |
ISSN: | 0741-3106 |
DOI: | 10.1109/55.701435 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 19 |
Issue: | 7 |
起始页: | 256 |
结束页: | 258 |
显示于类别: | Articles |
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