Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, CH | en_US |
dc.contributor.author | Chang, YH | en_US |
dc.contributor.author | Lin, HH | en_US |
dc.contributor.author | Lee, CP | en_US |
dc.date.accessioned | 2014-12-08T15:49:00Z | - |
dc.date.available | 2014-12-08T15:49:00Z | - |
dc.date.issued | 1998-06-01 | en_US |
dc.identifier.issn | 0577-9073 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/32579 | - |
dc.description.abstract | Three different experiments were employed to study the behaviors of neutral (D(0)) and negatively charged donors (D(-)) in doped GaAs/AlGaAs multiple quantum wells. The existence of the D(-) centers in such structures were demonstrated, and its optical properties were investigated. The spectral responses of such systems under different experimental conditions, such as different barrier doping concentration, different temperature, and different exposure to light illumination were studied. A potential fluctuation model was proposed to explain the experimental results. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Formation of D(-) centers in GaAs/AlGaAs quantum wells | en_US |
dc.type | Article | en_US |
dc.identifier.journal | CHINESE JOURNAL OF PHYSICS | en_US |
dc.citation.volume | 36 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 519 | en_US |
dc.citation.epage | 526 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
Appears in Collections: | Articles |