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dc.contributor.authorLee, CHen_US
dc.contributor.authorChang, YHen_US
dc.contributor.authorLin, HHen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:49:00Z-
dc.date.available2014-12-08T15:49:00Z-
dc.date.issued1998-06-01en_US
dc.identifier.issn0577-9073en_US
dc.identifier.urihttp://hdl.handle.net/11536/32579-
dc.description.abstractThree different experiments were employed to study the behaviors of neutral (D(0)) and negatively charged donors (D(-)) in doped GaAs/AlGaAs multiple quantum wells. The existence of the D(-) centers in such structures were demonstrated, and its optical properties were investigated. The spectral responses of such systems under different experimental conditions, such as different barrier doping concentration, different temperature, and different exposure to light illumination were studied. A potential fluctuation model was proposed to explain the experimental results.en_US
dc.language.isoen_USen_US
dc.titleFormation of D(-) centers in GaAs/AlGaAs quantum wellsen_US
dc.typeArticleen_US
dc.identifier.journalCHINESE JOURNAL OF PHYSICSen_US
dc.citation.volume36en_US
dc.citation.issue3en_US
dc.citation.spage519en_US
dc.citation.epage526en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
Appears in Collections:Articles