標題: A new simple and reliable method to form a textured Si surface for the fabrication of a tunnel oxide film
作者: Chang, KM
Li, CH
Sheih, BS
Yang, JY
Wang, SW
Yeh, TH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: nonvolatile memory devices;textured Si surface
公開日期: 1-May-1998
摘要: In this work, a textured Si surface was formed with a new simple and reliable method for tunnel oxide fabrication. First, a thin poly-Si layer (12 nm thick) was deposited on Si surface and a 30-nm thick dry oxide film was then grown in O-2 ambient. This oxide film was served as a sacrificial oxide. The poly-Si film and Si substrate were both oxidized during thermal oxidization. After stripping this sacrificial oxide, a textured Si surface was obtained. Tunnel oxide grown on this textured Si surface has an asymmetrical J-E characteristics, less interface states generation and better reliability (larger Q(bd)) as compared to those of normal oxide.
URI: http://dx.doi.org/10.1109/55.669730
http://hdl.handle.net/11536/32652
ISSN: 0741-3106
DOI: 10.1109/55.669730
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 19
Issue: 5
起始頁: 145
結束頁: 147
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