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dc.contributor.authorLin, HCen_US
dc.contributor.authorChen, CCen_US
dc.contributor.authorChien, CHen_US
dc.contributor.authorHsein, SKen_US
dc.contributor.authorWang, MFen_US
dc.contributor.authorChao, TSen_US
dc.contributor.authorHuang, TYen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:49:16Z-
dc.date.available2014-12-08T15:49:16Z-
dc.date.issued1998-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.661167en_US
dc.identifier.urihttp://hdl.handle.net/11536/32760-
dc.description.abstractMonitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.en_US
dc.language.isoen_USen_US
dc.subjectdielectric breakdownen_US
dc.subjectplasma materials-processing applicationsen_US
dc.subjectsemiconductor device reliabilityen_US
dc.titleEvaluation of plasma charging damage in ultrathin gate oxidesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.661167en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume19en_US
dc.citation.issue3en_US
dc.citation.spage68en_US
dc.citation.epage70en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000072247500002-
dc.citation.woscount24-
Appears in Collections:Articles


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