Evaluation of plasma charging damage in ultrathin gate oxides

doi:10.1109/55.661167

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, HC	en_US
dc.contributor.author	Chen, CC	en_US
dc.contributor.author	Chien, CH	en_US
dc.contributor.author	Hsein, SK	en_US
dc.contributor.author	Wang, MF	en_US
dc.contributor.author	Chao, TS	en_US
dc.contributor.author	Huang, TY	en_US
dc.contributor.author	Chang, CY	en_US
dc.date.accessioned	2014-12-08T15:49:16Z	-
dc.date.available	2014-12-08T15:49:16Z	-
dc.date.issued	1998-03-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.661167	en_US
dc.identifier.uri	http://hdl.handle.net/11536/32760	-
dc.description.abstract	Monitoring of plasma charging damage in ultrathin oxides (e.g., <4 nm) is essential to understand its impact on device reliability. However, it is observed that the shift of several device parameters, including threshold voltage, transconductance, and subthreshold swing, are not sensitive to plasma charging and thus not suitable for this purpose. Consequently, some destructive methods, such as the charge-to-breakdown measurement, are necessary to evaluate plasma damage in the ultrathin oxides.	en_US
dc.language.iso	en_US	en_US
dc.subject	dielectric breakdown	en_US
dc.subject	plasma materials-processing applications	en_US
dc.subject	semiconductor device reliability	en_US
dc.title	Evaluation of plasma charging damage in ultrathin gate oxides	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.661167	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	19	en_US
dc.citation.issue	3	en_US
dc.citation.spage	68	en_US
dc.citation.epage	70	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000072247500002	-
dc.citation.woscount	24	-
顯示於類別：	期刊論文

文件中的檔案：

000072247500002.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。