| 標題: | PHOTOREFLECTION STUDY ON THE SURFACE ELECTRIC-FIELD OF DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY |
| 作者: | LIU, DG CHANG, KH LEE, CP HSU, TM TIEN, YC 電控工程研究所 Institute of Electrical and Control Engineering |
| 公開日期: | 15-八月-1992 |
| 摘要: | Photoreflectance spectroscopy has been used to study the surface electric-field strength and the surface potential of delta-doped GaAs. Franz-Keldysh oscillations in the reflectance spectra were clearly observed and the oscillation periods were used to calculate the internal electric fields of the delta-doped samples. Based on the measured results and the self-consistent calculation, a surface potential of 0.6 eV is obtained. |
| URI: | http://dx.doi.org/10.1063/1.351710 http://hdl.handle.net/11536/3317 |
| ISSN: | 0021-8979 |
| DOI: | 10.1063/1.351710 |
| 期刊: | JOURNAL OF APPLIED PHYSICS |
| Volume: | 72 |
| Issue: | 4 |
| 起始頁: | 1468 |
| 結束頁: | 1472 |
| 顯示於類別： | 期刊論文 |
- FRANZ-KELDYSH OSCILLATIONS OF DELTA-DOPED GAAS / HSU, TM;TIEN, YC;LU, NH;TSAI, SP;LIU, DG
- Evaluation of modulating field of photoreflectance of surface-intrinsic-n(+) type doped GaAs by using photoinduced voltage / Lee, WY;Chien, JY;Wang, DP;Huang, KF;Huang, TC
- Arsenic precipitate accumulation in alternately Si/Be delta-doped GaAs grown by low-temperature molecular beam epitaxy / Hsieh, LZ;Huang, JH;Su, ZA;Wu, MC
- Effect of modulating field on photoreflectance simulated by electroreflectance / Chiou, SJ;Sung, YG;Wang, DP;Huang, KF;Huang, TC
- Correlation between defect concentration and carrier lifetime of GaAs grown by molecular beam epitaxy at different temperatures / Lin, GR;Liu, TA;Pan, CL
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