POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE FOR ELLIPSOMETRY MEASUREMENT

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DC 欄位	值	語言
dc.contributor.author	CHAO, TS	en_US
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.contributor.author	YEN, YT	en_US
dc.date.accessioned	2014-12-08T15:04:52Z	-
dc.date.available	2014-12-08T15:04:52Z	-
dc.date.issued	1992-06-04	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3385	-
dc.description.abstract	A multiple poly-oxide/poly-Si/SiO2/Si sandwiched structure is proposed for the conventional single incident angle and single wavelength ellipsometry measurement of the thicknesses and refractive indices of the poly-oxide and the poly-Si at the same time. The structure is simple and gives accurate results.	en_US
dc.language.iso	en_US	en_US
dc.subject	MEASUREMENT	en_US
dc.subject	THIN FILMS	en_US
dc.subject	ELLIPOSOMETRY	en_US
dc.title	POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE FOR ELLIPSOMETRY MEASUREMENT	en_US
dc.type	Article	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	28	en_US
dc.citation.issue	12	en_US
dc.citation.spage	1144	en_US
dc.citation.epage	1145	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1992HY58100042	-
dc.citation.woscount	2	-
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