Characteristics of poly-Si nanowire transistors with multiple-gate configurations

標題:	Characteristics of poly-Si nanowire transistors with multiple-gate configurations
作者:	Hsu, Hsing-Hui Lin, Homg-Chih Lee, Ko-Hui Huang, Jian-Fu Huang, Tiao-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2008
URI:	http://hdl.handle.net/11536/3408 http://dx.doi.org/10.1109/VTSA.2008.4530818
ISBN:	978-1-4244-1614-1
DOI:	10.1109/VTSA.2008.4530818
期刊:	2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM
起始頁:	101
結束頁:	102
顯示於類別：	會議論文

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