High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications

標題:	High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications
作者:	Yang, Shao-Ming Huang, Jiun-Jia Chien, Chao-Hsin Taeng, Pei-Jer Lee, Lurng-Shehng Tsai, Ming-Jinn Lei, Tan-Fu 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2008
摘要:	This paper presents the formation of CeO2 nanocrystals on SiO2 tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO2) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device.
URI:	http://hdl.handle.net/11536/3419 http://dx.doi.org/10.1109/VTSA.2008.4530792
ISBN:	978-1-4244-1614-1
DOI:	10.1109/VTSA.2008.4530792
期刊:	2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM
起始頁:	48
結束頁:	49
顯示於類別：	會議論文

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