標題: | INFLUENCE OF NONPARABOLICITY ON HOT-ELECTRONS IN N-TYPE GALLIUM-ARSENIDE |
作者: | WU, CC LIN, CJ 電控工程研究所 Institute of Electrical and Control Engineering |
公開日期: | 1-三月-1992 |
摘要: | Hot-electron transport in n-type GaAs has been investigated in the crossed applied DC electric field and DC magnetic field. The energy band structure of conduction electrons is taken to be a non-parabolic band and the dominant interaction between hot electrons and lattices is assumed to be the deformation-potential coupling. Results show that the dissipative current density increases nonlinearly with the applied electric field owing to the non-parabolic band structure of electrons in semiconductors. In the lower electric field region, the dependence of the current density on temperature does not appear to follow a regular trend. It is also shown that the current density depends strongly on the magnetic field. |
URI: | http://dx.doi.org/10.1088/0268-1242/7/3B/095 http://hdl.handle.net/11536/3512 |
ISSN: | 0268-1242 |
DOI: | 10.1088/0268-1242/7/3B/095 |
期刊: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
Volume: | 7 |
Issue: | 3B |
起始頁: | B367 |
結束頁: | B368 |
顯示於類別: | 會議論文 |