INFLUENCE OF NONPARABOLICITY ON HOT-ELECTRONS IN N-TYPE GALLIUM-ARSENIDE

Abstract

Hot-electron transport in n-type GaAs has been investigated in the crossed applied DC electric field and DC magnetic field. The energy band structure of conduction electrons is taken to be a non-parabolic band and the dominant interaction between hot electrons and lattices is assumed to be the deformation-potential coupling. Results show that the dissipative current density increases nonlinearly with the applied electric field owing to the non-parabolic band structure of electrons in semiconductors. In the lower electric field region, the dependence of the current density on temperature does not appear to follow a regular trend. It is also shown that the current density depends strongly on the magnetic field.