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dc.contributor.authorLO, SHen_US
dc.contributor.authorLEE, CPen_US
dc.date.accessioned2014-12-08T15:05:01Z-
dc.date.available2014-12-08T15:05:01Z-
dc.date.issued1992-02-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.121679en_US
dc.identifier.urihttp://hdl.handle.net/11536/3532-
dc.description.abstractThe looping effect in the I(D)-V(D) characteristics of GaAs MESFET's on semi-insulating substrates has been studied using a two-dimensional numerical analysis. Both the transient and the steady-state behaviors of the looping phenomenon are simulated and discussed. Peak voltage- and frequency-dependent behaviors of the looping effect are analyzed. The I(D)-V(D) loop is due to the difference in the distribution of ionized EL2 concentration when the drain voltage rises and falls because of the trapping process of EL2's. The output conductance is also found to be frequency-dependent and is explained by the frequency-dependent modulation of the potential barrier height at the channel/substrate interface due to the drain-voltage variation.en_US
dc.language.isoen_USen_US
dc.titleNUMERICAL-ANALYSIS OF THE LOOPING EFFECT IN GAAS-MESFETSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.121679en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume39en_US
dc.citation.issue2en_US
dc.citation.spage242en_US
dc.citation.epage249en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:A1992GZ71400004-
dc.citation.woscount3-
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