Low V-t gate-first Al/TaN/[Ir3Si-HfSi2-x]/HfLaON CMOS using simple laser annealing/reflection

Abstract

We report low V-t Al/TaN/[Ir3Si-HfSi2-x]/HfLaON CMOS using simple laser annealing/reflection with self-aligned and gate-first process compatible with current VLSI. At 1.05 nm EOT, good phi(ro-eff) of 5.04 and 4.24 eV, low V-t of -0.16 and 0.13 V, high mobility of 85 and 209 cm(2)/Vs, and small 85 degrees C BTI <= 40 mV (10 MV/cm, 1 hr) are measured for p- and n-MOS.