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dc.contributor.authorChao, TSen_US
dc.contributor.authorKuo, CPen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorChen, TPen_US
dc.contributor.authorHuang, TYen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:01:07Z-
dc.date.available2014-12-08T15:01:07Z-
dc.date.issued1998-01-08en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/11536/35-
dc.description.abstractThe authors report a novel Si-B diffusion source for doping p(+)-poly-Si gates in pMOSFETs. It is found that B penetration can be effectively suppressed by using this novel process. AU of the electrical properties of the MOS capacitors are significantly improved over those in the conventional BF2+ or B+-implanted samples. This new process is very promising for future surface-channel pMOSFETs.en_US
dc.language.isoen_USen_US
dc.titleSuppression of boron penetration in p(+) polysilicon gate using Si-B diffusion sourceen_US
dc.typeArticleen_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue1en_US
dc.citation.spage128en_US
dc.citation.epage129en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000071892700088-
dc.citation.woscount2-
Appears in Collections:Articles


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