NEW OBSERVATION OF GATE CURRENT IN OFF-STATE MOSFET

doi:10.1109/16.83738

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DC 欄位	值	語言
dc.contributor.author	CHEN, MJ	en_US
dc.date.accessioned	2014-12-08T15:05:10Z	-
dc.date.available	2014-12-08T15:05:10Z	-
dc.date.issued	1991-09-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/16.83738	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3701	-
dc.description.abstract	For a gate-controlled p+-n diode having gate-p+ overlap area of 3.7 x 10(-4) cm2, the work reports a new observation of the leakage current through a 235-angstrom gate oxide: the gate current components both due to Fowler-Nordheim electron tunneling through the gate-p+ overlap oxide and due to hot-electron injection have been separately detected. The corresponding gate current has been found to be dominated by Fowler-Nordheim electron tunneling prior to significant surface avalanche impact ionization. This observation is important for device application and for reliability study.	en_US
dc.language.iso	en_US	en_US
dc.title	NEW OBSERVATION OF GATE CURRENT IN OFF-STATE MOSFET	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/16.83738	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	38	en_US
dc.citation.issue	9	en_US
dc.citation.spage	2118	en_US
dc.citation.epage	2120	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1991FZ27400022	-
dc.citation.woscount	2	-
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