| 标题: | A REAL-TIME C-V MEASUREMENT CIRCUIT FOR MOS CAPACITORS UNDER CURRENT STRESSING |
| 作者: | LEE, CL LEI, TF HO, JH WANG, WT 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公开日期: | 1-八月-1991 |
| 摘要: | A dynamic large signal C-V measurement circuit is presented to measure real time C-V characteristics of a MOS structure under current stressing conditions. The real time information on the generation and filling of traps and surface states can thus be obtained. With this circuit it has been shown that, for an Al-gate MOS structure, charges on traps and interface surface states recover immediately after the stressing is removed. |
| URI: | http://dx.doi.org/10.1109/19.85352 http://hdl.handle.net/11536/3723 |
| ISSN: | 0018-9456 |
| DOI: | 10.1109/19.85352 |
| 期刊: | IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT |
| Volume: | 40 |
| Issue: | 4 |
| 起始页: | 775 |
| 结束页: | 777 |
| 显示于类别： | Articles |
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