EXCITON BINDING-ENERGY AND SUBBAND STRUCTURES OF GAAS/ALXGA1-XAS SUPERLATTICES

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DC Field	Value	Language
dc.contributor.author	CHUU, DS	en_US
dc.contributor.author	LOU, YC	en_US
dc.date.accessioned	2019-04-03T06:37:43Z	-
dc.date.available	2019-04-03T06:37:43Z	-
dc.date.issued	1991-06-15	en_US
dc.identifier.issn	0163-1829	en_US
dc.identifier.uri	http://dx.doi.org/10.1103/PhysRevB.43.14504	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3755	-
dc.description.abstract	The subband structure and the binding energy of an exciton in the GaAs/Al(x)Ga(1-x)As superlattice are studied by a simple approximation method. Both the exciton binding energy and the subband energy are expressed as a function of well width, barrier width, and Al composition. The influence of the effective-mass mismatch is taken into account. The energy spacings between interband or intersubband transitions are calculated and compared with the observed data. Good agreement is obtained.	en_US
dc.language.iso	en_US	en_US
dc.title	EXCITON BINDING-ENERGY AND SUBBAND STRUCTURES OF GAAS/ALXGA1-XAS SUPERLATTICES	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1103/PhysRevB.43.14504	en_US
dc.identifier.journal	PHYSICAL REVIEW B	en_US
dc.citation.volume	43	en_US
dc.citation.issue	18	en_US
dc.citation.spage	14504	en_US
dc.citation.epage	14512	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:A1991FW75500019	en_US
dc.citation.woscount	13	en_US
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