标题: | 溶胶凝胶法制备钛酸铋薄膜之双稳态导电率转换记忆体元件 Bistable Conductivity Switching Memory Devices Using Sol-Gel Derived BTO Thin Films |
作者: | 简士杰 Shih-Chieh Chien 曾俊元 Tseung-Yuen Tseng 电机学院微电子奈米科技产业专班 |
关键字: | 电阻式记忆体;非挥发性记忆体;钛酸铋薄膜;RRAM;Non-volatile memory;BTO Thin Film |
公开日期: | 2006 |
摘要: | 近来由于传统快闪式记忆体(flash memory)在不断微缩化下,面临到许多急欲克服之难题,例如储存在悬浮闸极(floating gate)中之电荷,因穿遂氧化层(tunneling oxide)过薄而随着时间渐渐流失,丧失其非挥发记忆效应,另外,在长时间操作之下,易于穿遂氧化层内产生缺陷以及操作电压过高…等,如此瓶颈,实为下世代非挥发性记忆体研究之首要课题。然而,众多前瞻性非挥发性记忆体研究中,电阻式记忆体为利用电压或电流脉冲在极短时间下改变电阻值,并藉由元件内部电阻值之不同作为其相对应之记忆状态,进而达到资料写入之动作。 本实验首先在二氧化矽(200奈米)/矽基板上镀制白金下电极(80奈米),接着沉积厚度为100奈米之镍酸镧(LaNiO3) 为缓冲层,接着再利用溶胶凝胶法制备钛酸铋电阻薄膜(20~60奈米),最后镀上80奈米厚之白金上电极,完成Pt/BiTiO3/LaNiO3/Pt实验结构。发现此记忆元件具有电阻转态现象,并讨论其电学、物理、化学等性质,分析此材料应用于电阻式记忆体之潜力与特性探讨。 A Recently, due to continuously scaling down for the conventional flash memory, there are many issues need to be overcome, such as the charge stored in the floating gate lost due to direct tunneling current or defects formed in the tunneling oxide during long-term operation. Therefore, the investigation of the next-generation nonvolatile memory is going to be the main topics. Among various next-generation nonvolatile memories, resistance random access memory store the data by change the resistance in the memory cell, which can be altered by voltage or current pulse in a short time leading to the write/erase operation. In this experiment, an 80-nm-thick Pt bottom electrode was deposited on SiO2/Si substrate, and follow by a 100-nm-thick LaNiO3 buffer layer. By sol-gel method, the 20-60nm BiTiO3 thin films were fabricated, and finally, the 80-nm-thick Pt top electrode were deposited to fabricating the Pt/BiTiO3/LaNiO3/Pt structure. The resistive switching behaviors are found in this structure, and the electrical, physical, and chemical properties are also investigated to discuss the possibility for RRAM application. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT009494504 http://hdl.handle.net/11536/37959 |
显示于类别: | Thesis |
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