高功函數矽化鉺金屬閘極之高溫穩定氮氧化鉿鑭P型金氧半場效電晶體研究

Abstract

本論文研究高溫穩定矽化鉺金屬閘極之氮氧化鉿鑭P型金氧半場效電晶體元件，此等效氧化層厚度為1.6奈米的元件在平帶電壓上一伏時有著1.8×10-5A/cm2的低漏電流，並且擁有高達5.08電子伏特的高功函數和84cm2．S的高移動率。此閘極優先的P型金氧半場效電晶體製程是利用自我對準的離子布植技術和1000℃快速高溫退火的方式來製作，而這些方法都相容於現在大尺寸製程整合的生產線。

We research a novel 1000℃ stable HfLaON p-MOSFET with Ir3Si gate. Low leakage current of 1.8 × 10−5 A/cm2 at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 cm2/V．s are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000 ℃ rapid thermal annealing is fully compatible to current very large scale integration fabrication lines.