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dc.contributor.authorHwang, Huey-Liangen_US
dc.contributor.authorChiou, Yan-Kaien_US
dc.contributor.authorChang, Che-Haoen_US
dc.contributor.authorWang, Chen-Chanen_US
dc.contributor.authorLee, Kun-Yuen_US
dc.contributor.authorWu, Tai-Boren_US
dc.contributor.authorKwo, Raynienen_US
dc.contributor.authorHong, Minghweien_US
dc.contributor.authorChang-Liao, Kuei-Shuen_US
dc.contributor.authorLu, Chun-Yuanen_US
dc.contributor.authorLu, Chun-Changen_US
dc.contributor.authorChiu, Fu-Chienen_US
dc.contributor.authorChen, Chun-Hengen_US
dc.contributor.authorLee, Joseph Ya-Minen_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2014-12-08T15:05:21Z-
dc.date.available2014-12-08T15:05:21Z-
dc.date.issued2007-10-31en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.apsusc.2007.07.117en_US
dc.identifier.urihttp://hdl.handle.net/11536/3896-
dc.description.abstractIt is well known that Taiwan's IC industry is in the very leading front of the world, and production of 65 nm devices was launched in 2006. Within a few years, the need of high-k dielectrics and metal gates is eminent and truly indispensable. Professor H.L. Hwang (the author) organized 12 professors and 50 graduate students of National Tsing Hua University and Chiao Tung University, and executed this particular project, which is sponsored by the Ministry of Economic Affairs of Republic of China, and is aimed at treating efficiently this problem and transferred the critical technologies to industry in a time frame of 3 years. (C) 2007 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectnanoen_US
dc.subjectMOSFETen_US
dc.subjecthigh-k dielectricen_US
dc.subjectmetal gateen_US
dc.titleAdvance in next Century nanoCMOSFET researchen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.apsusc.2007.07.117en_US
dc.identifier.journalAPPLIED SURFACE SCIENCEen_US
dc.citation.volume254en_US
dc.citation.issue1en_US
dc.citation.spage236en_US
dc.citation.epage241en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000250800100053-
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