| 標題: | RESONANT TUNNELING OF ELECTRONS FROM QUANTIZED LEVELS IN THE ACCUMULATION LAYER OF DOUBLE-BARRIER HETEROSTRUCTURES |
| 作者: | WU, JS CHANG, CY LEE, CP CHANG, KH LIU, DG LIOU, DC 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
| 公開日期: | 26-Nov-1990 |
| URI: | http://dx.doi.org/10.1063/1.103879 http://hdl.handle.net/11536/3959 |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.103879 |
| 期刊: | APPLIED PHYSICS LETTERS |
| Volume: | 57 |
| Issue: | 22 |
| 起始頁: | 2311 |
| 結束頁: | 2312 |
| Appears in Collections: | Articles |
- ELECTRICAL CHARACTERISTICS OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES WITH DIFFERENT ELECTRODE DOPING CONCENTRATIONS / WU, JS;CHANG, CY;LEE, CP;CHANG, KH;LIU, DG
- QUANTUM EFFECT IN THE ACCUMULATION LAYER ON FIELD-INDUCED PHOTOLUMINESCENCE OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES / WU, JS;CHANG, KH;LEE, CP;CHANG, CY;LIU, DG
- INVESTIGATION OF INDIUM DOPING AND INCORPORATION IN ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES / WU, JS;CHANG, KH;LEE, CP;CHANG, CY;LIU, DG
- IMPROVED ALGAAS/GAAS DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES USING 2-DIMENSIONAL SOURCE ELECTRONS / WU, JS;LEE, CP;CHANG, CY;CHANG, KH;LIU, DG
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