标题: 降低漏电流之高效能倍压器电路设计
High Performance Charge Pump Circuit Design with Minimized Leakage Current
作者: 柯昱州
Yu-Zhou Ke
陈科宏
Ke-Horng Chen
电机学院IC设计产业专班
关键字: 倍压器;电荷帮浦;电源管理;voltage doubler;charge pump;power management
公开日期: 2007
摘要: 倍压器从1976年发展至今已有30年的歷史,但不論是何种倍压器都有其缺点及优点,而这些倍压器的缺点大多數都会造成电压增益以及效率的降低,此篇論文将会改善这些缺点,提出一个全新的交错式倍压器电路。截至目前为止,大多數的倍压器都有臨界电压(Threshold Voltage)、基体效应(Body Effect)、闸极氧化层稳定度(Gate-Oxide Reliability)、逆向导通耗损(Reversion Loss)、传导耗损(Conduction Loss)及电荷重新分布耗损(Redistribution Loss)等种种的问题,上述种种因素会造成闸极氧化层被击穿使得MOS电晶体损坏之外,亦会导致电压增益与效率降低,上述的问题只要能够获得改善并将能量的耗损降至最低,倍压器就能有更高的效能。
本論文所提出的交错式倍压器电路能够改善或减少上述非理想因素所造成能量的损失,論文中所提的技术可以在倍压器操作过程中有效的避免能量的损失,以增加倍压器的电压增益与效率,使用TSMC 0.35um 制程來实现所设计的倍压器电路,其模拟结果可以证明本文中所提技术的正确性与效能。
Charge pump has developed for thirty years from 1976 till now. However, different kinds of charge pump have their advantages and disadvantages. The biggest problem among these charge pump circuits is that most of these charge pumps would cause voltage gain and efficiency lower than the ideal values due to the undesired loss. In this thesis, the disadvantage that charge pump circuits are alleviated and a new cross-coupled charge pump circuit is presented to enhance the performance of energy loss. Till now, most charge pumps all have the same problems such as, threshold voltage drop, body effect, gate-oxide reliability, reversion loss, conduction loss and redistribution loss. These problems may cause the layer of gate-oxide broken and the system failure. Besides, the breakdown not only makes damage to MOS transistors but also decreases voltage gain and, thereby diminishing conversion efficiency of charge pump. Therefore, the most important things that the designers need to do are to minimize the effects of these disadvantages.
The cross coupled charge pump mentioned in this thesis will improve or alleviate the above problems and thus increase the efficiency of charge pump circuits. The proposed technique can effectively avoid the energy loss in the operation of charge pump circuits. The test chip was designed by TSMC 0.35um technology. Simulation results can demonstrate the correctness and performance of the proposed techniques.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT009595509
http://hdl.handle.net/11536/40133
显示于类别:Thesis