AN ANALYTIC SATURATION MODEL FOR DRAIN AND SUBSTRATE CURRENTS OF CONVENTIONAL AND LDD MOSFETS

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DC 欄位	值	語言
dc.contributor.author	HUANG, GS	en_US
dc.contributor.author	WU, CY	en_US
dc.date.accessioned	2014-12-08T15:05:32Z	-
dc.date.available	2014-12-08T15:05:32Z	-
dc.date.issued	1990-07-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/16.55754	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4069	-
dc.language.iso	en_US	en_US
dc.title	AN ANALYTIC SATURATION MODEL FOR DRAIN AND SUBSTRATE CURRENTS OF CONVENTIONAL AND LDD MOSFETS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/16.55754	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	37	en_US
dc.citation.issue	7	en_US
dc.citation.spage	1667	en_US
dc.citation.epage	1677	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1990DK33200009	-
dc.citation.woscount	14	-
顯示於類別：	期刊論文

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