标题: 电感耦合式电浆氮化和氟化制程对铪系介电质薄膜之影响
The Effect of Nitridation and Fluorination Processes by Inductive Coupled Plasma to Hafnium-based Dielectric Thin Films
作者: 林协佑
Lin, Hsieh-Yo
张国明
Chang, Kow-Ming
电子研究所
关键字: 氮化;氟化;电浆处理;Nitridation;fluorination;Plasma Treatment
公开日期: 2009
摘要: 使用二氧化矽当作闸极介电层已经达到科技和理论的极限。在4Gbit动态随机存取记忆体中的等效氧化层厚度,将被微缩到0.22奈米,此厚度非常接近二氧化矽的结构限制,因为二氧化矽的Si–O键长为0.17奈米。对于MOSFET闸极介电层而言,使用氧化铪是目前及未来最为推广的材料,但是high-k闸极介电层在C-V曲线中被发现有磁滞现象,此现象会导致MOS元件中平带电压漂移以及临界电压的不稳定。本研究制造了Al-Ti-HfAlO(HfO2)-Si 金属绝缘层矽结构之电容,作为分析的样品。本研究藉由探讨铪系介电质薄膜在不同电浆处理的条件下C-V和J-V的特性。此外,本研究亦探讨铪系介电质薄膜在不同氮化和氟化电浆制成的条件下之可靠度问题,诸如磁滞现象、应力引致漏电流、常压应力测试,因此,本研究发现氮化和氟化电浆能有效的消灭氧的空洞,以及改善介面限补电荷密度,来有效的降低漏电流,改善其电容值及增加其可靠度。
Silicon oxide gate dielectric is now being pushed to both its technological and theoretical limits. The equivalent oxide thickness (EOT) in the 4-Gbit generation dynamic random access memory (DRAM) will be scaled down further to 0.22nm which is very close to the structural limit of silicon dioxide, as the Si–O bond in silicon oxide is 0.17 nm. The oxide of using Hafnium-based is a most promising material for future MOSFET gate oxide applications. Unfortunately, for high-k gate dielectrics, there is a hysteresis phenomenon in its capacitance-voltage (C-V) characteristics. This hysteresis induces a flatband voltage shift, and threshold voltage instability when it is applied to MOSFETs. In this study, we fabricated Al-Ti-HfAlO(HfO2)-Si MIS capacitor as our analysis device. The electrical characteristics of the film under different plasma conditions were discussed by C-V and I-V curves. Moreover, the reliability of the films under different plasma treatment conditions were discussed by hysteresis effect, SILC ( Stress Induced Leakage Current ) profile, CVS ( Constant Voltage Stress ) test. Hence, the nitrogen atoms and fluorine atoms can eliminate oxygen vacancies and repair the interface trap densities to suppress the leakage current.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT079611567
http://hdl.handle.net/11536/41699
显示于类别:Thesis


文件中的档案:

  1. 156701.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.