标题: | 一个应用在SATA-3.0且使用环型振荡器的6GHz全积体化展频时脉产生器 A Fully Integrated 6GHz Spread-Spectrum Ring-VCO Clock Generator for SATA-3.0 Applications |
作者: | 李镇宇 Li, Zhen-Yu 阙河鸣 Chiueh, Herming 电信工程研究所 |
关键字: | 锁相回路;展频时脉产生器;SATA-3.0;环型振荡器;三角积分调变器;6GHz;PLL;SSCG;SATA-3.0;Ring-VCO;ΔΣ-modulator;6GHz |
公开日期: | 2010 |
摘要: | Serial Advanced Technology Attachment(SATA)已成为最重要的传输介面标准之ㄧ,其中传输量为6Gb/s的SATA-3.0更是下一代的主流规格。但晶片的时脉速度操作的越来越快,相对的高强度中心时脉信号所造成的电磁干扰(Electro-Magnetic Interference, EMI)现象也更加严重。相较于传统的金属屏蔽法(Metal Shielding),展频时脉产生器(Spread Spectrum Clock Generator, SSCG)是一种更有效降低晶片中EMI问题的方法。 本论文在TSMC-0.18um 1P6M CMOS制程下,设计出一个可运用在SATA-3.0介面的SSCG。其特色在于使用Ring-VCO直接产生6GHz时脉取样,并且搭配三阶的ΔΣ-modulator展频调变电路来设计。同时也考量到最后晶片可能的主机板操作环境,针对此点作了Process Variation、Voltage、Temperature测试,也就是所谓的PVT分析,希望能提升对抗工作环境温度变异的能力。这样完成的SSCG,除了可避开传统电感的精准制程特性要求外,更可以充分发挥Ring-VCO的各种优点:具有架构简单容易实现,低面积使用,以及具备能够在任意制程下作平移的条件。最后设计上将整体电路全积体化,对于将来的电路整合有极大的优势。 在所有晶片量测中,每一颗晶片皆能够符合SATA-3.0所订立的各项规格要求,而各项常温状况下的平均量测结果如下,晶片面积为933um×933um,核心电路面积为500um×300um。晶片操作频率为6GHz,工作电压为1.8V,功率消耗为65.658mW(不包含输出buffer),EMI reduction在RBW=100K时为13.55dB,在RBW=10K时为24.30dB。PLL锁定在6GHz的peak to peak jitter为16.256ps,rms jitter为2.152ps,展频功能启动时peak to peak jitter为21.541ps,而在展频期间任意取250个周期的peak to peak jitter为10.106ps。在晶片温度上升的测试中,只需将电压调整为2.0V,PLL功能值到125°C都能够正常工作产生6GHz时脉。 The serial advanced technology attachments (SATA) has become one of the most important interface standards, and SATA-3.0 with transmission rate 6 Gb/s is the major specifications in next generation. But when the chip operation clock speed works more rapid, the electro-magnetic interference (EMI) effect caused from high intensity peak energy of center frequency is more seriously too. Compare with conventional metal shielding, spread-spectrum clock generator (SSCG) is a more efficient method to reduce EMI effect in chip. This thesis tries to design a SSCG can be used for SATA-3.0 in TSMC 0.18um 1P6M CMOS process which using a ring voltage controlled oscillators (Ring-VCO) at 6GHz operating frequency and chose the multi-stage-noise-shaping (MASH 1-1-1) delta-sigma modulator (3rd ΔΣ-modulator) for spread spectrum circuit. Because the design SSCG chip may operate on the motherboard, we also take the PVT analysis about process variation, voltage, temperature, and hope the design chip can compete working conditions about temperature change. The proposed SSCG avoid the inductors with precisely process characteristic so it has the Ring-VCO advantage of simple architecture, low area cost, and can be implemented in any CMOS process. We also make the chip fully integrated that has advantage of combine circuit in the future. Finally, this thesis tests the entire design SSCG chip and all of the chip can match SATA-3.0 specifications in the room temperature. The average measurement results are list below. Chip area is 933um×933um and active area is 500um×300um. The chip operation frequency is 6GHz and consumes 65.658mW (no including output buffer) with 1.8V supply. EMI reduction is 13.55dB (RBW=100K) and 24.30dB (RBW=100K). The PLL locked on 6GHz clock peak-to-peak (pp) jitter is 16.256ps and rms jitter is 2.152ps. The pp jitter becomes 21.541ps when spread spectrum function work, and the random pp jitter with 250 cycles is 10.106ps. In the chip temperature rise test, the PLL function can still work at 6GHz clock until 125°C by change supply voltage to 2.0V. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT079613611 http://hdl.handle.net/11536/42051 |
显示于类别: | Thesis |
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