标题: 以扫描探针测量矽半导体载子浓度
Scanning Probe Microscopy Technique for Carrier Concentration Measurement in Silicon
作者: 苏柏智
Po-Chih Su
崔秉钺
Bing-Yue Tsui
电子研究所
关键字: 扫描探针显微术;载子浓度;表面电位;表面浓度;Scanning probe microscopy;carrier concentration;surface potential;surface concentration
公开日期: 2003
摘要: 扫描探针显微术是近年来发展迅速的一种表面分析技术,具有非破坏性、二维量测、高空间解析度等诸多优点。KFM (Kelvin Probe Force Microscopy)是其中一种,能够量测试片表面电位。藉由量测矽半导体的表面电位,KFM可望应用于载子浓度的二维量测。
本论文首先改良既有的KFM系统的回馈控制电路,以得到较佳的扫瞄结果。接着探讨试片的表面处理,发现经过氧化处理与氢氟酸浸泡会使试片表面产生Si-F及Si-O键结而导致表面电位影像对比劣化,而使用丙酮超音波震荡、氢氟酸浸泡、去离子水冲洗,可有效消除上述键结,提升影像对比。此外,以KFM量测试片的表面电位差,以展阻、电容-电压法、二次离子质谱仪分别量测试片的表面浓度,建立两者之间的校正关系,并与理论值相比较,探讨彼此产生差异的原因。本论文亦针对剖面量测作了先期研究,以对贴研磨的方式尝试剖面试片的制作,并根据KFM量测的要求逐步加以改进,以期将来能够利用KFM量测元件剖面的二维载子分布。
Scanning probe microscopy (SPM) is one of the surface analysis techniques which are developed rapidly in recent years. It has advantages of non-destructive, 2-D measurement, and high spatial resolution. Kelvin probe force microscopy (KFM) is one application of the SPM technique. The KFM measures surface potential of sample. By means of measuring the surface potential of silicon semiconductor, KFM is capable of 2-D measurement of carrier distribution.
Before the measurement of surface potential, the feedback control circuit was modified to improve the signal response. Then, this thesis studied sample preparation method. It was observed that the oxidized or HF-dipped sample surface was covered by Si-O or Si-F, respectively, and resulted in degraded contrast of surface potential image. These bonds were removed effectively and image contrasts were promoted after the samples were ultrasonic oscillated in acetone, dipped in HF, and rinsed by D.I. water. After the surface potential differences were measured by KFM, several methods including spreading resistance profiling (SRP) method, capacitance-voltage (C-V) method, and secondary ion mass spectroscopy (SIMS) were employed to determine the surface carrier/dopant concentration in order to setup the correlation between surface potential difference and surface carrier/dopant concentration. This thesis also beforehand studied on the preparation of cross-sectional sample. Although the results are not perfect, it is looked forward that KFM can be applied on 2-D carrier profiling of nano-devices.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT009111530
http://hdl.handle.net/11536/42924
显示于类别:Thesis


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