| 標題: | APPLICATION OF SUPERLATTICE GATE AND MODULATION-DOPED BUFFER FOR GAAS POWER MESFET GROWN BY MBE |
| 作者: | LIU, WC LOUR, WS CHANG, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公開日期: | 1-Sep-1989 |
| URI: | http://dx.doi.org/10.1007/BF00616861 http://hdl.handle.net/11536/4297 |
| ISSN: | 0947-8396 |
| DOI: | 10.1007/BF00616861 |
| 期刊: | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING |
| Volume: | 49 |
| Issue: | 3 |
| 起始頁: | 321 |
| 結束頁: | 324 |
| Appears in Collections: | Articles |
- MBE GROWN UNDOPED SUPERLATTICE GATE AND MODULATION-DOPED BUFFER STRUCTURE FOR POWER FET APPLICATIONS / LIU, WC;HSU, WC;LOUR, WS;WANG, RL;CHANG, CY
- A GaAs/AlAs wet selective etch process for the gate recess of GaAs power metal-semiconductor field-effect transistors / Chang, EY;Lai, YL;Lee, YS;Chen, SH
- High-efficiency and low-distortion directly-ion-implanted GaAs power MESFET's for digital personal handy-phone applications / Lai, YL;Chang, EY;Chang, CY;Tai, MC;Liu, TH
- 2-V-operation delta-doped power HEMT's for personal handy-phone systems / Lai, YL;Chang, EY;Chang, CY;Liu, TH;Wang, SP
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