| 标题: | GEOMETRY-EFFECTS ON THE GAAS BIPOLAR UNIPOLAR NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR |
| 作者: | YARN, KF WANG, YH CHANG, CY 电控工程研究所 Institute of Electrical and Control Engineering |
| 公开日期: | 1-九月-1989 |
| URI: | http://hdl.handle.net/11536/4299 |
| ISSN: | 0038-1101 |
| 期刊: | SOLID-STATE ELECTRONICS |
| Volume: | 32 |
| Issue: | 9 |
| 起始页: | 755 |
| 结束页: | 760 |
| 显示于类别： | Articles |
- MOLECULAR-BEAM EPITAXY GROWN GAAS BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE POWER TRANSISTOR / YARN, KF;CHANG, CY;WANG, YH;WANG, RL
- A NOVEL GAAS CURRENT-CONTROLLED BIPOLAR UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY / YARN, KF;WANG, YH;CHANG, CY
- CHARACTERIZATION OF A GAAS CURRENT-CONTROLLED BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR / YARN, KF;WANG, YH;CHANG, CY
- VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTURE / YARN, KF;WANG, YH;CHANG, CY;CHANG, CS
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