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dc.contributor.author林建宏en_US
dc.contributor.authorJian-Hong Linen_US
dc.contributor.author張國明en_US
dc.contributor.authorKow-Ming Changen_US
dc.date.accessioned2014-12-12T01:33:48Z-
dc.date.available2014-12-12T01:33:48Z-
dc.date.issued2003en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT009111566en_US
dc.identifier.urihttp://hdl.handle.net/11536/43301-
dc.description.abstract操作奈米尺度的元件近年來在各個產業被都被廣泛的討論著。在奈米尺度下,材料的特性以及載子的傳輸的機制,因為表面原子數佔總原子數的比例上升,與塊材(Bulk Material)有相當程度上的差異。在本篇論文中,我們採用掃描探針微影術 (Scanning Probe Lithography),以鄰近樣品表面的探針引起局部的陽極氧化反應,配合Tetramethylammonium Hydroxide (TMAH) 對矽的晶向選擇性蝕刻,在Silicon on Insulator (SOI) 的晶片上,製作出不同的奈米元件結構,探討在奈米尺度下的一些電流傳導現象。我們嘗試製作具有單電子傳輸特性的元件,並在低溫下確實的發現其特性。zh_TW
dc.language.isoen_USen_US
dc.subject矽質奈米元件zh_TW
dc.subject量子島zh_TW
dc.subject庫倫阻斷zh_TW
dc.subjectSilicon nanodeviceen_US
dc.subjectquantum islanden_US
dc.subjectCoulomb blockadeen_US
dc.title矽質奈米級電子元件的研究zh_TW
dc.titleA Study of Silicon Nanoelectronics Devicesen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
Appears in Collections:Thesis


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