A NEW TWIN-WELL CMOS PROCESS USING NITRIDIZED-OXIDE-LOCOS (NOLOCOS) ISOLATION TECHNOLOGY

標題:	A NEW TWIN-WELL CMOS PROCESS USING NITRIDIZED-OXIDE-LOCOS (NOLOCOS) ISOLATION TECHNOLOGY
作者:	TSAI, HH YU, CL WU, CY 電控工程研究所 Institute of Electrical and Control Engineering
公開日期:	1-Jul-1989
URI:	http://hdl.handle.net/11536/4339
ISSN:	0741-3106
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	10
Issue:	7
起始頁:	307
結束頁:	309
Appears in Collections:	Articles

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