鈦-鎳-鈦箔片接合碳化矽與Kovar之介面反應

Abstract

Ti-Ni-Ti的多層金屬薄片利用局部液相連接法(PTLP)接合碳化矽(SiC)與Kovar，以800℃、900℃、1000℃、1100℃以及1200℃持溫1小時與1000℃持溫0.1、1、6以及36小時來探討生成機構，並以SEM/EDS、TEM/EDS以及SADP分析其金屬-陶瓷側反應物之變化。Ti/Ni介面主要反應層為Ti2Ni、TiNi以及TiNi3，熱處理溫度提高至1100℃以上或持溫時間增加至6 小時以上，皆會使得鈦箔消耗殆盡，而使反應層轉為以TiNi3以及TiNi為主， Kovar/Ti介面主要反應層為Fe2Ti、(Fe, Ni)Ti以及(Ni, Fe)Ti2，熱處理溫度提高至1100℃以上，鈦箔耗盡，轉為γ-(Fe, Ni)，Fe2Ti以及(Fe, Ni)Ti，持溫時間增加至6小時以上，反應層只剩Fe2Ti以及(Fe, Ni)Ti，且不會產生γ-(Fe, Ni)，Ti/SiC介面主要反應層為Ti3Si + TiC，熱處理溫度1200℃時，產生反應物Ti2Ni3Si，時間增長到6小時以上，則會產生安定的Ti5Si3。

Silicon Carbide (SiC) jointed with Kovar by partial transient liquid phase (PTLP) technique with titanium and nickel foils interlayer. This composite jointed with different temperature and time to discover the phase formation mechanisms. Using scanning electron microscope (SEM) and transmission electron microscope (TEM) analyzed the microstructure. The reaction layers of Ti/Ni interface are TiNi, TiNi3 and Ti2Ni. When the heat treatment temperature up to 1100℃ or annealing time to 6 h, the reaction layers turn to TiNi3 and TiNi. The reaction layers of Kovar/Ti interface are Fe2Ti, (Fe, Ni)Ti and (Ni, Fe)Ti2. When the heat treatment temperature rising up to 1100℃, the reaction layers turn to γ-(Fe, Ni), (Fe, Ni)Ti and (Ni, Fe)Ti2. The reaction layers of Ti/SiC interface is Ti3Si + TiC. When the heat treatment temperature rising up to 1200℃, the reaction layer turns to Ti2Ni3Si. When the annealing time rising to 6 h, the reaction layer turn to Ti5Si3.