EFFECT OF POLY-SI GETTERING SCHEME ON THE QUALITY OF SI EPITAXIAL FILM

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHEN, MC	en_US
dc.contributor.author	LEE, JY	en_US
dc.contributor.author	WU, HJ	en_US
dc.date.accessioned	2014-12-08T15:06:27Z	-
dc.date.available	2014-12-08T15:06:27Z	-
dc.date.issued	1981	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5032	-
dc.language.iso	en_US	en_US
dc.title	EFFECT OF POLY-SI GETTERING SCHEME ON THE QUALITY OF SI EPITAXIAL FILM	en_US
dc.type	Meeting Abstract	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	128	en_US
dc.citation.issue	3	en_US
dc.citation.spage	C107	en_US
dc.citation.epage	C107	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1981LF08600367	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文