BREAKDOWN-INITIATED NEGATIVE-RESISTANCE DEVICE WITH MOST-TRANSISTOR STRUCTURE

doi:10.1063/1.325734

標題:	BREAKDOWN-INITIATED NEGATIVE-RESISTANCE DEVICE WITH MOST-TRANSISTOR STRUCTURE
作者:	YU, GJ TSAI, C YU, SY 交大名義發表電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering
公開日期:	1979
URI:	http://hdl.handle.net/11536/5082 http://dx.doi.org/10.1063/1.325734
ISSN:	0021-8979
DOI:	10.1063/1.325734
期刊:	JOURNAL OF APPLIED PHYSICS
Volume:	50
Issue:	10
起始頁:	6421
結束頁:	6422
顯示於類別：	期刊論文