標題: BREAKDOWN-INITIATED NEGATIVE-RESISTANCE DEVICE WITH MOST-TRANSISTOR STRUCTURE
作者: YU, GJ
TSAI, C
YU, SY
交大名義發表
電控工程研究所
National Chiao Tung University
Institute of Electrical and Control Engineering
公開日期: 1979
URI: http://hdl.handle.net/11536/5082
http://dx.doi.org/10.1063/1.325734
ISSN: 0021-8979
DOI: 10.1063/1.325734
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 50
Issue: 10
起始頁: 6421
結束頁: 6422
Appears in Collections:Articles